DocumentCode :
1814950
Title :
Optical gain and lasing in colloidal quantum dots
Author :
Klimov, V.I. ; Hollingsworth, J.A. ; Mikhailovsky, A.A. ; Malko, Aleksandra ; Xu, S. ; Leatherdale, C.A. ; Eisler, H.-J. ; Bawendi, M.G.
Author_Institution :
Chem. Div., Los Alamos Nat. Lab., NM, USA
fYear :
2001
fDate :
11-11 May 2001
Firstpage :
4
Lastpage :
5
Abstract :
Summary form only given. Semiconductor quantum dots (QDs) promise the lowest lasing threshold for semiconductor media. Additionally, QDs in the strong confinement regime have an emission wavelength that is a pronounced function of size, adding the advantage of continuous spectral tunability simply by changing the dot radius. Lasing has previously been demonstrated for epitaxially grown III-V QDs. Large lateral dimensions and difficulties in size control limit their spectral tunability using quantum confinement effects. An alternative approach to fabricating QDs is through chemical synthesis which can produce semiconductor nanoparticles (colloidal QDs) with radii from 1 to 6 nm and with size dispersions as small as 5%. Such dots show strong quantum confinement and permit size-controlled spectral tunability over an energy range as wide as 1 eV. The combination of tunable electronic energies and chemical flexibility make colloidal QDs ideal building blocks for the bottom-up assembly of optical device structures, including optical amplifiers and lasers. However, despite more than a decade of effort, lasing in small-size colloidal nanoparticles has not been realized. To determine what hinders lasing action, we performed extensive dynamical studies of radiative and nonradiative processes in CdSe colloidal QDs.
Keywords :
II-VI semiconductors; cadmium compounds; colloids; laser tuning; population inversion; semiconductor lasers; semiconductor quantum dots; stimulated emission; 1 to 6 nm; CdSe; CdSe colloidal QDs; bottom-up assembly; chemical flexibility; chemical synthesis; colloidal QDs; colloidal nanoparticles; colloidal quantum dots; continuous spectral tunability; dot radius; emission wavelength; epitaxially grown III-V QDs; lasers; lasing; lasing action; lasing threshold; lateral dimensions; nonradiative processes; optical amplifiers; optical device structures; optical gain; quantum confinement; quantum confinement effects; radiative processes; semiconductor QDs; semiconductor media; semiconductor nanoparticles; semiconductor quantum dots; size control; size dispersions; size-controlled spectral tunability; spectral tunability; strong confinement regime; tunable electronic energies; Assembly; Chemical lasers; III-V semiconductor materials; Nanoparticles; Optical devices; Potential well; Quantum dots; Size control; Stimulated emission; Tunable circuits and devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2001. QELS '01. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-663-X
Type :
conf
DOI :
10.1109/QELS.2001.961772
Filename :
961772
Link To Document :
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