DocumentCode
1814952
Title
ZnS nanostructures for field emitters
Author
Zhi-Gang Chen ; Jin Zou ; Gaoqing Lu
Author_Institution
Mater. Eng., Univ. of Queensland, Brisbane, QLD, Australia
fYear
2010
fDate
22-26 Feb. 2010
Firstpage
21
Lastpage
23
Abstract
We report new novel ZnS nanostructures show superior field emission with a low turn-on field, high field-enhancement factor, large current density and high stability indicating the capability of the ZnS branched architecture as field emitters. This excellent field-emission property is attributed to its high crystallinity, single-phased and cone-shaped nanometer-sized tips. This study suggests that optimized FE properties could be achievable through designing nanostructured architectures with a crystallographic orientation relationship.
Keywords
II-VI semiconductors; crystal orientation; current density; field emission; nanofabrication; nanostructured materials; wide band gap semiconductors; zinc compounds; ZnS; crystallographic orientation; current density; field emission property; field-enhancement factor; nanostructured materials; Current density; Iron; Materials; Morphology; Nanowires; Optoelectronic devices; ZnS; field emissions; nanostructures;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoscience and Nanotechnology (ICONN), 2010 International Conference on
Conference_Location
Sydney, NSW
Print_ISBN
978-1-4244-5261-3
Type
conf
DOI
10.1109/ICONN.2010.6045161
Filename
6045161
Link To Document