Title :
High accuracy temperature bipolar modeling for demanding Bandgap application
Author :
Pourchon, F. ; Beckrich-Ros, H. ; Raya, C. ; Faure, C. ; Gautheron, B. ; Blanc, J.P. ; Reynard, B. ; Celi, D.
Author_Institution :
STMicroelectron., Crolles
fDate :
Sept. 30 2007-Oct. 2 2007
Abstract :
VDD reduction in advanced CMOS IC´s push for reduced temperature stability spread of bipolar based BGR. To achieve this goal, a reliable extraction methodology for IC temperature coefficient is detailed. Based on corner lot measurements, a worst-case bipolar model is built. Bandgap circuit measurements are finally compared to statistical simulations.
Keywords :
CMOS analogue integrated circuits; bipolar analogue integrated circuits; integrated circuit measurement; integrated circuit modelling; CMOS IC; bandgap circuit measurements; bandgap reference circuit; bipolar-based BGR; corner lot measurements; temperature bipolar modeling; temperature coefficient; temperature stability; CMOS integrated circuits; CMOS technology; Circuit simulation; Circuit stability; Current measurement; Photonic band gap; Reactive power; Semiconductor device modeling; Temperature dependence; Voltage; Bandgap reference circuit; bipolar modeling; substrate PNP; temperature coefficient;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM '07. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-1019-4
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2007.4351864
