Title :
Single-mode continuous wave operation of electrically pumped 2.25 μm GaSb-based VCSEL
Author :
Bachmann, A. ; Kashani-Shirazi, K. ; Lim, T. ; Dier, O. ; Lauer, C. ; Amann, M.-C.
Author_Institution :
Walter Schottky Inst., Tech. Univ. Munchen, Garching
Abstract :
We present a continuous wave, electrically pumped, GaSb-based vertical-cavity surface-emitting laser (VCSEL) for trace-gas sensing applications with a room-temperature emission wavelength of 2.25 mum. For current confinement, a structured buried tunnel junction (BTJ) is used. Low threshold currents of 1.7 mA, single mode operation and a tunability by current of 0.87 nm/mA have been achieved.
Keywords :
III-V semiconductors; gallium compounds; gas sensors; laser tuning; surface emitting lasers; GaSb; current 1.7 mA; current confinement; emission wavelength; room temperature; single-mode continuous wave operation; structured buried tunnel junction; temperature 293 K to 298 K; threshold currents; trace-gas sensing; tunability; vertical-cavity surface-emitting laser; wavelength 2.25 mum; Absorption; Distributed Bragg reflectors; Gas lasers; Laser excitation; Laser modes; Pump lasers; Surface emitting lasers; Threshold current; Tunable circuits and devices; Vertical cavity surface emitting lasers; GaSb; TDLAS; VCSEL; buried tunnel junction; electrically pumped; mid-infrared; single mode;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4703030
