Graded-bandgap quantum-dot lasers and arrays

Author

Yanson, Dan A. ; Marsh, John H. ; McDougall, Stewart D. ; Kowalski, Olek P. ; Bryce, A. Catrina ; Kim, Shin-Sung

Author_Institution

Hamilton Int. Technol. Park, Intense Ltd., Glasgow

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

3

Abstract

Novel bandgap-engineered quantum-dot devices are reported: a dual-wavelength laser, a gain-broadened laser/amplifier employing a bandgap-graded cavity, and a multi-wavelength laser array with a 20 nm tuning range at 1280 nm. The devices are realized using a multi-bandgap post-growth intermixing technique.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser cavity resonators; quantum dot lasers; semiconductor laser arrays; semiconductor optical amplifiers; semiconductor quantum dots; InGaAs-GaAs-AlGaAs; dual-wavelength laser; gain-broadened laser-amplifier; graded-bandgap quantum-dot laser cavity; multibandgap post-growth intermixing technique; multiwavelength laser array; wavelength 1280 nm; wavelength 20 nm; Annealing; Gallium arsenide; III-V semiconductor materials; Laser tuning; Optical arrays; Optical materials; Photonic band gap; Quantum dot lasers; Semiconductor laser arrays; Temperature distribution; bandgap engineering; gain broadening; intermixing; multiple wavelength laser arrays; quantum dots;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4703032

Filename

4703032