Title :
Characteristics of novel titanium oxide thin film used for nonvolatile memories
Author :
Fang, Liang ; Sun, He ; Chi, Yaqing ; Zhu, Xuan ; Zhang, Chao ; Li, Yong
Author_Institution :
Sch. of Comput., Nat. Univ. of Defense Technol., Changsha, China
Abstract :
With the physical method of depositing TiO2 thin films, the bipolar resistive switching phenomenon is observed. We find that I-V curve in oxygen-filled sample is less symmetric than in the oxygen-unfilled. The conduction behavior is dominated by Ohmic behavior in the LRS and SCLC in the HRS, which proves that there is a negative resistive in the transition from LRS to HRS. The Pt/titania/Pt cell can find its application to the NVMS.
Keywords :
electrical conductivity; electrical resistivity; electron beam deposition; metal-semiconductor-metal structures; ohmic contacts; platinum; scanning electron microscopy; semiconductor growth; semiconductor materials; semiconductor thin films; titanium compounds; Pt-TiO2-Pt; SEM; bipolar resistive switching phenomenon; conduction property; electron beam evaporation; novel titanium oxide thin film; ohmic property; Educational institutions; Electrodes; Films; Semiconductor device measurement; Switches; Temperature measurement; Titanium;
Conference_Titel :
Nanoscience and Nanotechnology (ICONN), 2010 International Conference on
Conference_Location :
Sydney, NSW
Print_ISBN :
978-1-4244-5261-3
Electronic_ISBN :
978-1-4244-5262-0
DOI :
10.1109/ICONN.2010.6045166
