A 0.35 μm SiGe BiCMOS technology for power amplifier applications

Author

Joseph, Alvin ; Liu, Qizhi ; Hodge, Wade ; Gray, Peter ; Stein, Kenneth ; Previti-Kelly, Rose ; Lindgren, Peter ; Gebreselasie, Ephrem ; Voegeli, Ben ; Candra, Panglijen ; Hershberger, Doug ; Malladi, Ramana ; Wang, Ping-Chuan ; Watson, Kim ; He, Zhong-Xi

Author_Institution

IBM Semicond. Res. & Dev. Center, Essex

fYear

2007

fDate

Sept. 30 2007-Oct. 2 2007

Firstpage

198

Lastpage

201

Abstract

In this paper we introduce, a state-of-the-art SiGe BiCMOS power amplifier technology that features two NPNs with 40 GHz / 6.0 V & 27 GHz / 8.5 V (f_T - BV_ceo) respectively, a novel low inductance metal ground through-silicon-via (TSV), integrated on a low-cost 0.35 μm lithography node with 3.3 V / 5.0 V dual-gate CMOS technology and high-quality passives on a 50 Ω.cm substrate.

Keywords

BiCMOS integrated circuits; CMOS integrated circuits; Ge-Si alloys; MIMIC; millimetre wave power amplifiers; BiCMOS technology; SiGe; frequency 27 GHz; frequency 40 GHz; lithography node; low inductance metal ground through-silicon; power amplifier; size 0.35 micron; voltage 3.3 V; voltage 6 V; BiCMOS integrated circuits; CMOS technology; Costs; Gallium arsenide; Germanium silicon alloys; Inductance; Packaging; Power amplifiers; Silicon germanium; Thermal management;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM '07. IEEE

Conference_Location

Boston, MA

ISSN

1088-9299

Print_ISBN

978-1-4244-1018-7

Electronic_ISBN

1088-9299

Type

conf

DOI

10.1109/BIPOL.2007.4351868

Filename

4351868