Title :
A 0.35 μm SiGe BiCMOS technology for power amplifier applications
Author :
Joseph, Alvin ; Liu, Qizhi ; Hodge, Wade ; Gray, Peter ; Stein, Kenneth ; Previti-Kelly, Rose ; Lindgren, Peter ; Gebreselasie, Ephrem ; Voegeli, Ben ; Candra, Panglijen ; Hershberger, Doug ; Malladi, Ramana ; Wang, Ping-Chuan ; Watson, Kim ; He, Zhong-Xi
Author_Institution :
IBM Semicond. Res. & Dev. Center, Essex
fDate :
Sept. 30 2007-Oct. 2 2007
Abstract :
In this paper we introduce, a state-of-the-art SiGe BiCMOS power amplifier technology that features two NPNs with 40 GHz / 6.0 V & 27 GHz / 8.5 V (fT - BVceo) respectively, a novel low inductance metal ground through-silicon-via (TSV), integrated on a low-cost 0.35 μm lithography node with 3.3 V / 5.0 V dual-gate CMOS technology and high-quality passives on a 50 Ω.cm substrate.
Keywords :
BiCMOS integrated circuits; CMOS integrated circuits; Ge-Si alloys; MIMIC; millimetre wave power amplifiers; BiCMOS technology; SiGe; frequency 27 GHz; frequency 40 GHz; lithography node; low inductance metal ground through-silicon; power amplifier; size 0.35 micron; voltage 3.3 V; voltage 6 V; BiCMOS integrated circuits; CMOS technology; Costs; Gallium arsenide; Germanium silicon alloys; Inductance; Packaging; Power amplifiers; Silicon germanium; Thermal management;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM '07. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-1018-7
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2007.4351868
