Performance Enhancement of Tunnel Field-Effect Transistors by Synthetic Electric Field Effect

Author

Morita, Yusuke ; Mori, Takayoshi ; Migita, S. ; Mizubayashi, W. ; Tanabe, A. ; Fukuda, Kenji ; Matsukawa, T. ; Endo, Kazuhiro ; O´uchi, S. ; Yong Xun Liu ; Masahara, M. ; Ota, Hiroyuki

Author_Institution

Green Nanoelectron. Center, Nanoelectron. Res. Inst., Tsukuba, Japan

Volume

35

Issue

7

fYear

2014

fDate

Jul-14

Firstpage

792

Lastpage

794

Abstract

In this letter, we propose a synthetic electric field (SE) effect to enhance the performance of tunnel field-effect transistors (TFETs). The novel SE-TFET architecture utilizes both horizontal and vertical electric fields induced by a gate electrode that is wrapped around an ultrathin epitaxial channel. The drain current of the SE-TFET is increased up to 100 times in comparison with those of conventional TFETs. The subthreshold slope of the SE-TFET also improved, and enhanced to 52 mV/decade by scaling the channel width and channel thickness.

Keywords

epitaxial growth; field effect transistors; tunnel transistors; drain current; electric fields; gate electrode; performance enhancement; subthreshold slope; synthetic electric field effect; tunnel field effect transistors; ultrathin epitaxial channel; Electrodes; Epitaxial growth; Logic gates; MOSFET; Performance evaluation; Tunneling; FinFET; FinFET.; Tunnel FET (TFET); drain current; epitaxial growth; silicon;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2014.2323337

Filename

6819818