Title :
High efficiency 600-mW pHEMT distributed power amplifier employing drain impedance tapering technique
Author :
Narendra, Krish ; Ain, M.F. ; Anand, Lallit ; Pragash, S. ; Hassan, S.I.S. ; Zhurbenko, Vitaliy
Author_Institution :
R&D Center, Motorola Technol., Penang
Abstract :
4-stage distributed power amplifier (DPA) employing tapering the drain load networks to achieve high efficiency is reported. The active device with enhancement mode pHEMT (pseudomorphic High Electron Mobility Transistor) technology is used. Measurement results of 600 mW, 30 % of power-aided- efficiency (PAE) and gain of 10 dB is achieved within frequency range of 10-1800 MHz. Low supply voltage of 4.5 V is used for each device. Good agreement between measured and simulated results is obtained.
Keywords :
distributed amplifiers; high electron mobility transistors; power amplifiers; distributed power amplifier; drain impedance tapering; pHEMT; power-aided-efficiency; Distributed amplifiers; Electron mobility; Frequency measurement; Gain measurement; HEMTs; High power amplifiers; Impedance; Low voltage; MODFETs; PHEMTs;
Conference_Titel :
Microwave and Millimeter Wave Technology, 2008. ICMMT 2008. International Conference on
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-1879-4
Electronic_ISBN :
978-1-4244-1880-0
DOI :
10.1109/ICMMT.2008.4540819
