Neuronal spike event generation by memristors

Author

Shin, Sangho ; Sacchetto, Davide ; Leblebici, Yusuf ; Kang, Sung-Mo

Author_Institution

Jack Baskin Sch. of Eng., Univ. of California, Santa Cruz, Santa Cruz, CA, USA

fYear

2012

fDate

29-31 Aug. 2012

Firstpage

1

Lastpage

4

Abstract

New memristors-based neuronal spike event generator is introduced. By using the dynamic properties of conditional resistance switching of a practical bistable memristive device, the neuronal action potential is generated describing both the integrate-and-fire spiking events and the long enough refractory period of nerve membrane cells. The memristor offers the dual time-constants which model the unbalanced charging and discharging periods of the spike signals. With a Pt/TiO₂/Pt memristive device having the R_OFF/R_ON resistance ratio of 3000, the memristor-based spike generator offers spike trains with about 0.03% duty.

Keywords

bioelectric phenomena; biomedical equipment; biomembranes; cellular biophysics; memristors; neurophysiology; platinum; titanium compounds; Pt-TiO₂-Pt; bistable memristive device; charging period; conditional resistance switching; discharging period; integrate-and-fire spiking event; memristors-based neuronal spike event generator; nerve membrane cell; neuronal action potential; neuronal spike event generation; refractory period; spike signal; spike train; Biological system modeling; Biomembranes; Electric potential; Generators; Integrated circuit modeling; Memristors; Neurons;

fLanguage

English

Publisher

ieee

Conference_Titel

Cellular Nanoscale Networks and Their Applications (CNNA), 2012 13th International Workshop on

Conference_Location

Turin

ISSN

2165-0160

Print_ISBN

978-1-4673-0287-6

Type

conf

DOI

10.1109/CNNA.2012.6331427

Filename

6331427