Title :
Neuronal spike event generation by memristors
Author :
Shin, Sangho ; Sacchetto, Davide ; Leblebici, Yusuf ; Kang, Sung-Mo
Author_Institution :
Jack Baskin Sch. of Eng., Univ. of California, Santa Cruz, Santa Cruz, CA, USA
Abstract :
New memristors-based neuronal spike event generator is introduced. By using the dynamic properties of conditional resistance switching of a practical bistable memristive device, the neuronal action potential is generated describing both the integrate-and-fire spiking events and the long enough refractory period of nerve membrane cells. The memristor offers the dual time-constants which model the unbalanced charging and discharging periods of the spike signals. With a Pt/TiO2/Pt memristive device having the ROFF/RON resistance ratio of 3000, the memristor-based spike generator offers spike trains with about 0.03% duty.
Keywords :
bioelectric phenomena; biomedical equipment; biomembranes; cellular biophysics; memristors; neurophysiology; platinum; titanium compounds; Pt-TiO2-Pt; bistable memristive device; charging period; conditional resistance switching; discharging period; integrate-and-fire spiking event; memristors-based neuronal spike event generator; nerve membrane cell; neuronal action potential; neuronal spike event generation; refractory period; spike signal; spike train; Biological system modeling; Biomembranes; Electric potential; Generators; Integrated circuit modeling; Memristors; Neurons;
Conference_Titel :
Cellular Nanoscale Networks and Their Applications (CNNA), 2012 13th International Workshop on
Conference_Location :
Turin
Print_ISBN :
978-1-4673-0287-6
DOI :
10.1109/CNNA.2012.6331427
