DocumentCode :
1815249
Title :
Solution processed Al-doped ZnO nanostructures
Author :
Kemmitt, Tim ; Linklater, Rachael
Author_Institution :
Ind. Res. Ltd., Lower Hutt, New Zealand
fYear :
2010
fDate :
22-26 Feb. 2010
Firstpage :
51
Lastpage :
54
Abstract :
We report the wet-chemical synthesis of Al-doped ZnO thin films, powders, and nanorod arrays. Solid state 27Al NMR studies on powder samples confirm the incorporation of the Al ions in the tetrahedral Zn sites in the structure. The degree of Al incorporation is dependent on the amine type used in the precursor solution and the heating profile prior to calcination. The degree of crystal alignment in thin films, determined by X-ray diffraction studies, is also influenced by the dopant level and the heating profile.
Keywords :
II-VI semiconductors; X-ray diffraction; aluminium; calcination; doping profiles; nanofabrication; nanorods; nuclear magnetic resonance; powders; semiconductor doping; semiconductor thin films; wide band gap semiconductors; zinc compounds; X-ray diffraction; ZnO:Al; calcination; dopant level; heating profile; nanorod arrays; nanostructures; powders; solid state 27Al NMR; thin films; wet-chemical method; Crystals; Films; Heating; Powders; Solids; X-ray scattering; Zinc oxide; Al-doped zinc oxide; TCO; nanorods; wet-chemical synthesis; zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoscience and Nanotechnology (ICONN), 2010 International Conference on
Conference_Location :
Sydney, NSW
Print_ISBN :
978-1-4244-5261-3
Electronic_ISBN :
978-1-4244-5262-0
Type :
conf
DOI :
10.1109/ICONN.2010.6045173
Filename :
6045173
Link To Document :
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