• DocumentCode
    1815249
  • Title

    Solution processed Al-doped ZnO nanostructures

  • Author

    Kemmitt, Tim ; Linklater, Rachael

  • Author_Institution
    Ind. Res. Ltd., Lower Hutt, New Zealand
  • fYear
    2010
  • fDate
    22-26 Feb. 2010
  • Firstpage
    51
  • Lastpage
    54
  • Abstract
    We report the wet-chemical synthesis of Al-doped ZnO thin films, powders, and nanorod arrays. Solid state 27Al NMR studies on powder samples confirm the incorporation of the Al ions in the tetrahedral Zn sites in the structure. The degree of Al incorporation is dependent on the amine type used in the precursor solution and the heating profile prior to calcination. The degree of crystal alignment in thin films, determined by X-ray diffraction studies, is also influenced by the dopant level and the heating profile.
  • Keywords
    II-VI semiconductors; X-ray diffraction; aluminium; calcination; doping profiles; nanofabrication; nanorods; nuclear magnetic resonance; powders; semiconductor doping; semiconductor thin films; wide band gap semiconductors; zinc compounds; X-ray diffraction; ZnO:Al; calcination; dopant level; heating profile; nanorod arrays; nanostructures; powders; solid state 27Al NMR; thin films; wet-chemical method; Crystals; Films; Heating; Powders; Solids; X-ray scattering; Zinc oxide; Al-doped zinc oxide; TCO; nanorods; wet-chemical synthesis; zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoscience and Nanotechnology (ICONN), 2010 International Conference on
  • Conference_Location
    Sydney, NSW
  • Print_ISBN
    978-1-4244-5261-3
  • Electronic_ISBN
    978-1-4244-5262-0
  • Type

    conf

  • DOI
    10.1109/ICONN.2010.6045173
  • Filename
    6045173