• DocumentCode
    1815271
  • Title

    Impact of layout and process on RF and analog performances of 3D damascene MIM capacitors

  • Author

    Crémer, S. ; Segura, N. ; Joubin, P. ; Marin, M. ; Thomas, M. ; Richard, C. ; Boret, S. ; Benoit, D. ; Bruyère, S.

  • Author_Institution
    STMicroelectron., Crolles
  • fYear
    2007
  • fDate
    Sept. 30 2007-Oct. 2 2007
  • Firstpage
    242
  • Lastpage
    245
  • Abstract
    RF and analog designs require high performances MIM capacitors. In order to continue the downscaling of MIM devices, we proposed and integrated a 3D damascene MIM capacitor using Si3N4 dielectric in the copper back-end of a 0.13 mum BICMOS technology. Layout and process have been recently optimized to reach excellent reliability performances while keeping very good RF performances.
  • Keywords
    MIM devices; reliability; thin film capacitors; 3D damascene MIM capacitors; BICMOS technology; copper; dielectric; reliability performances; BiCMOS integrated circuits; CMOS technology; Capacitance; Copper; Dielectric materials; Electrodes; MIM capacitors; MIM devices; Radio frequency; Space technology; Dielectric material; MIM Devices; Reliability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM '07. IEEE
  • Conference_Location
    Boston, MA
  • ISSN
    1088-9299
  • Print_ISBN
    978-1-4244-1019-4
  • Electronic_ISBN
    1088-9299
  • Type

    conf

  • DOI
    10.1109/BIPOL.2007.4351879
  • Filename
    4351879
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1815271