Title :
Incorporation of colloidal quantum dots into silicon photonic structures
Author :
Qiao, Hong ; Gal, Mike ; Gooding, J. Justin ; Reece, Peter
Author_Institution :
Sch. of Phys., Univ. of New South Wales, Sydney, NSW, Australia
Abstract :
Strong room temperature light emission from planar mesoporous silicon microcavities with II-VI compound colloidal quantum dots selectively deposited in the spacer layer has been achieved. We describe the origin of the significant enhancement in emission intensity in terms of cavity modified spontaneous emission. We investigate the role of surface chemistry and pore morphology in achieving efficient light emission from these hybrid devices.
Keywords :
II-VI semiconductors; colloidal crystals; elemental semiconductors; etching; mesoporous materials; microcavities; photonic crystals; semiconductor quantum dots; silicon; spontaneous emission; surface chemistry; II-VI compound colloidal quantum dots; Si; anodic etching; cavity modified spontaneous emission; colloidal quantum dots; planar mesoporous silicon microcavities; pore morphology; room temperature light emission; silicon photonic structures; surface chemistry; temperature 293 K to 298 K; Microcavities; Optical films; Optical filters; Quantum dots; Silicon; Surface morphology; Surface treatment; optical microcavity; quantum dots; silicon photonics;
Conference_Titel :
Nanoscience and Nanotechnology (ICONN), 2010 International Conference on
Conference_Location :
Sydney, NSW
Print_ISBN :
978-1-4244-5261-3
Electronic_ISBN :
978-1-4244-5262-0
DOI :
10.1109/ICONN.2010.6045174
