1550nm AlGaInAs DFB laser with over 20 GHz electro-optical bandwidth and below −150 dB/Hz RIN and receptor for Ku band analog microwave links

Author

Burie, J.-R. ; Glastre, G. ; Starck, C. ; Beuchet, G. ; Ragot, L. ; Fabre, S. ; Mimoun, M. ; Thebault, M. ; Ligat, B. ; Ratel, P. ; Minot, M. ; Loon, M. ; Fié, J. -P ; Laruelle, F. ; van Dijk, F. ; Decobert, J. ; Parillaud, O. ; Enard, A. ; Achouche, M. ;

Author_Institution

3S Photonics, Nozay

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

2

Abstract

1550 nm AlGaInAs DFB lasers and PIN receptors were developed for analog transmission up to 20 GHz. Over 20 GHz bandwidth are measured for both laser and detector. Highly linear characteristics and low RIN < -150 dB/Hz have been obtained for lasers.

Keywords

III-V semiconductors; aluminium compounds; distributed feedback lasers; electro-optical effects; gallium arsenide; gallium compounds; semiconductor lasers; AlGaInAs; DFB laser; PIN receptors; electro-optical bandwidth; wavelength 1550 nm; Bandwidth; Laser modes; Lasers and electrooptics; Masers; Optical materials; Optical sensors; Power generation; Power lasers; Temperature; Waveguide lasers; 1550nm; 20GHz; DFB lasers; PIN receptor; analog transmission;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4703039

Filename

4703039