Title :
Evaluation of SiGeC HBT Varactor using different Collector access and Base-Collector junction Configuration in BiCMOS technologies
Author :
Morandini, Yvan ; Larchanche, J.-F. ; Gaquière, Christophe
Author_Institution :
STMicroelectron., Crolles
fDate :
Sept. 30 2007-Oct. 2 2007
Abstract :
This paper is focused on the evaluation of SiGeC HBT varactor in BiCMOS technologies. First, we compare a standard collector-base junction varactor with the contribution of specific collector between a low cost SiGeC HBT module. From this, we suggest new types of structure with no additional mask which allows to keep high quality factor and to have a wide tuning range (3:1) between standard diode P+/Nwell and HBT varactor with SIC implant.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; Q-factor; heterojunction bipolar transistors; varactors; BiCMOS technologies; HBT varactor; SIC implant; SiGeC; base-collector junction configuration; quality factor; BiCMOS integrated circuits; Capacitance; Costs; Germanium silicon alloys; Heterojunction bipolar transistors; Implants; Q factor; Silicon carbide; Silicon germanium; Varactors;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM '07. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-1019-4
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2007.4351880
