Pt/TiO2 nanotubes/SiC schottky diodes for hydrogen gas sensing applications

Author

Shafiei, Mahnaz ; Sadek, Abu Z. ; Yu, Jerry ; Arsat, Rashidah ; Latham, Kay ; Kalantar-zadeh, Kourosh ; Wlodarski, Wojtek

Author_Institution

Sch. of Electr. & Comput. Eng., RMIT Univ., Melbourne, VIC, Australia

fYear

2010

fDate

22-26 Feb. 2010

Firstpage

58

Lastpage

61

Abstract

Titanium oxide nanotubes Schottky diodes were fabricated for hydrogen gas sensing applications. The TiO₂ nanotubes were synthesized via anodization of RF sputtered titanium films on SiC substrates. Two anodization potentials of 5 V and 20 V were used. Scanning electron microscopy of the synthesized films revealed nanotubes with avarage diameters of 20 nm and 75 nm. X-ray diffraction analysis revealed that the composition of the oxide varied with the anodization potential. TiO₂ (anatase) being formed preferentially at 5 V and TiO (no anatase) at 20 V. Current-voltage characteristics of the diodes were studied towards hydrogen at temperatures from 25°C to 250°C. At constant current bias of -500 μA and 250°C, the lateral voltage shifts of 800 mV and 520 mV were recorded towards 1% hydrogen for the 5 V and 20 V anodized nanotubes, respectively.

Keywords

Schottky diodes; X-ray diffraction; anodisation; gas sensors; nanofabrication; platinum; scanning electron microscopy; semiconductor nanotubes; semiconductor-metal boundaries; silicon compounds; sputter deposition; titanium compounds; wide band gap semiconductors; Current-voltage characteristics; Pt-TiO₂-SiC; RF sputtered titanium films; Scanning electron microscopy; SiC; SiC substrates; X-ray diffraction analysis; anodization; current -500 muA; hydrogen gas sensing applications; synthesized films; temperature 25 degC to 250 degC; titanium oxide nanotubes Schottky diodes; voltage 20 V; voltage 5 V; Films; Gas detectors; Nanotubes; Schottky diodes; Silicon carbide; Titanium; Schottky diode; TiO2 nanotubes; gas sensor; hydrogen; reverse bias;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoscience and Nanotechnology (ICONN), 2010 International Conference on

Conference_Location

Sydney, NSW

Print_ISBN

978-1-4244-5261-3

Electronic_ISBN

978-1-4244-5262-0

Type

conf

DOI

10.1109/ICONN.2010.6045175

Filename

6045175