Title :
Millimeter wave properties of photo-illuminated Double Drift indium phosphide IMPATTs at elevated temperature
Author :
Mukherjee, M. ; Mukhopadhyay, J. ; Banerjee, J.P. ; Roy, S.K.
Author_Institution :
Centre of Millimeter wave Semicond. Devices & Syst., Univ. of Calcutta, Kolkata
Abstract :
The millimeter-wave properties of double drift region (p+ p n n+ type) InP IMPATT diodes are studied for the first time at elevated junction temperature. The study indicates that the device is capable of generating a CW power of 427.0 mW and 358.4 mW at 95 GHz and 145 GHz frequencies respectively. The effects of optical-illumination on the high frequency properties of the device are investigated through a simulation technique. The study reveals that the photo-generated leakage current reduces the RF power output and negative resistance of the devices along with an upward shift of operating frequency. The effect of illumination on the millimeter-wave properties of the diode is found to be more pronounced at higher window frequency (140 GHz) than at lower window frequency (94 GHz).
Keywords :
III-V semiconductors; IMPATT diodes; indium compounds; leakage currents; millimetre wave diodes; InP; RF power output; elevated junction temperature; frequency 145 GHz; frequency 95 GHz; millimeter wave properties; negative resistance; p+- p- n- n+ type diode; photo-generated leakage current; photo-illuminated double drift IMPATT diodes; power 358.4 mW; power 427 mW; window frequency; Charge carriers; Indium phosphide; Millimeter wave communication; Millimeter wave devices; Millimeter wave technology; Optical control; Poisson equations; Radio frequency; Semiconductor diodes; Temperature;
Conference_Titel :
Microwave and Millimeter Wave Technology, 2008. ICMMT 2008. International Conference on
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-1879-4
Electronic_ISBN :
978-1-4244-1880-0
DOI :
10.1109/ICMMT.2008.4540829
