Title :
Development of a high voltage intelligent power module (HVIPM)
Author :
Tanaka, T. ; Mizoshiri, T. ; Suekawa, E. ; Umesaki, I. ; Kawaguchi, Y. ; Donlon, John F.
Author_Institution :
Power Device Div., Mitsubishi Electr. Corp., Fukuoka, Japan
Abstract :
A high voltage intelligent power module (HVIPM) rated at 600 A, 6.5 kV has been developed using an optimized punch through IGBT chip, coordinated free-wheel diode, high quality manufacturing processes, and high performance gate control technology.
Keywords :
insulated gate bipolar transistors; modules; power semiconductor diodes; 6.5 kV; 600 A; coordinated free-wheel diode; high performance gate control technology; high quality manufacturing processes; high voltage intelligent power module; optimized punch through IGBT chip; Bridge circuits; Conductivity; Insulated gate bipolar transistors; Multichip modules; Power system reliability; Semiconductor diodes; Thyristors; Transient analysis; Voltage; Wheels;
Conference_Titel :
Power Electronics Specialist Conference, 2003. PESC '03. 2003 IEEE 34th Annual
Print_ISBN :
0-7803-7754-0
DOI :
10.1109/PESC.2003.1218162
