Title :
Placing single quantum dots in INP photonic crystal microcavities - A route to single and entangled photon pair sources
Author :
Poole, P.J. ; Dalacu, D. ; Reimer, M.E. ; Frédérick, S. ; Williams, R.L. ; Aers, G.C. ; Korkusinski, M. ; Hawrylak, P. ; Lapointe, J.
Author_Institution :
Inst. for Microstruct. Sci., Nat. Res. Council, Ottawa, ON
Abstract :
We investigate the growth of positioned InAs/InP quantum dots for incorporation into InP-based photonic crystal microcavities. The optical properties of these quantum dots and the photonic crystal microcavities are described, as well as the effect of a lateral electric field on biexciton binding energy. This system is proposed as a scalable route to single and entangled photon pair sources at telecommunications wavelengths.
Keywords :
III-V semiconductors; biexcitons; indium compounds; microcavities; photonic crystals; semiconductor growth; semiconductor quantum dots; InAs-InP; biexciton binding energy; entangled photon pair sources; lateral electric; lateral electric field; optical properties; photonic crystal microcavities; positioned quantum dot growth; single quantum dots; telecommunication wavelengths; Indium phosphide; Light sources; Microcavities; Photonic crystals; Quantum computing; Quantum dots; Quantum entanglement; Radiative recombination; Spontaneous emission; Stimulated emission; microcavity; photonic crystal; quantum dot; single photon source;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4703048
