Title :
Effects of high current pulses on integrated circuit metallization reliability
Author :
Liew, B.K. ; Cheung, N.W. ; Hu, C.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
Transient heat flow analysis using two-dimensional finite-element method has been used to calculate the temperature rise of aluminum lines on passivated and unpassivated silicon substrates. The results are used to predict the effect of self-heating on the electromigration lifetime of aluminum interconnects under pulse current stressing. A model has been developed to incorporate damage relaxation and self-heating effects on electromigration. It is shown that self-heating is expected to produce less than 20% error in typical accelerated testing conditions provided the peak current density (Jp) is less than 4×106 A/cm2. Design rules based on keeping the average current density (Jav) constant are acceptable provided that duty factor is larger than 1% for all frequencies above 1 MHz
Keywords :
aluminium; circuit reliability; electromigration; integrated circuit technology; metallisation; thermal analysis; Al-Si; Si substrate; accelerated testing conditions; damage relaxation; electromigration lifetime; high current pulses; integrated circuit; interconnects; metallization reliability; model; passivated substrates; pulse current stressing; self-heating; temperature rise; transient heat flow analysis; two-dimensional finite-element method; unpassivated substrates; Aluminum; Current density; Electromigration; Finite element methods; Integrated circuit interconnections; Integrated circuit metallization; Pulse circuits; Silicon; Temperature; Transient analysis;
Conference_Titel :
Thermal Phenomena in the Fabrication and Operation of Electronic Components: I-THERM '88, InterSociety Conference on
Conference_Location :
Los Angeles, CA
DOI :
10.1109/ITHERM.1988.28668
