Title :
Temperature measurement in Al films during electromigration test
Author :
Jin, Hong ; Gao, Guang-bo
Author_Institution :
Dept. of Radio-Electron., Beijing Polytech. Univ., China
Abstract :
A novel measurement structure and method is presented by which one can measure the temperature of Al thin films during electromigration testing with high precision, better than previously attainable. At ambient temperature of 27°C, experimental results show that the temperature and resistance variations of Al films can be considered as three stages. The first stage is the increasing process of the temperature and resistance of Al films (TAl and RAl) due to Joule heating. The second stage is an electromigration process in which the TAl and R Al varied very slowly. The last is the catastrophic failure process in which the TAl and RAl increase rapidly until open circuit failure
Keywords :
aluminium; electromigration; integrated circuit testing; metallic thin films; metallisation; temperature measurement; Al thin films; IC metallisation; IC testing; Joule heating; catastrophic failure process; electromigration test; measurement structure; temperature measurement; Current density; Electrical resistance measurement; Electromigration; Metallization; Resistance heating; Resistors; Temperature measurement; Testing; Thermal resistance; Transistors;
Conference_Titel :
Thermal Phenomena in the Fabrication and Operation of Electronic Components: I-THERM '88, InterSociety Conference on
Conference_Location :
Los Angeles, CA
DOI :
10.1109/ITHERM.1988.28672
