Title :
Recent application of silicon carbide to high power microwave
Author :
Morse, A.W. ; Esker, P.M. ; Sriram, S. ; Hawkins, J.J. ; Chen, L.S. ; Ostop, J.A. ; Smith, T.J. ; Davis, C.D. ; Barron, R.R. ; Clarke, R.C. ; Siergiej, R.R. ; Brandt, C.D.
Author_Institution :
Electronic Sensors & Syst. Div., Northrop Grumman, Baltimore, MD, USA
Abstract :
Silicon carbide is emerging semiconductor material which is now proven to be especially well suited for high power, high frequency applications. Recent results verify the superiority of silicon carbide over both silicon or gallium arsenide for fabrication of high power transistors from DC through X-band. A silicon carbide UHF television module has demonstrated good signal fidelity at the 2000 W PEP level. S-band transistors show well over 200 watts peak for radar applications, and over 6 W has been obtained at X-band in a silicon carbide MESFET.
Keywords :
UHF field effect transistors; microwave field effect transistors; microwave power transistors; power MESFET; power field effect transistors; silicon compounds; static induction transistors; wide band gap semiconductors; 6 to 2000 W; MESFET; S-band transistors; SIT; SiC; UHF television module; X-band transistors; high power microwave devices; high power transistors; radar applications; semiconductor material; Fabrication; Gallium arsenide; MESFETs; Microwave transistors; Packaging; Power generation; Semiconductor materials; Silicon carbide; TV broadcasting; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-3814-6
DOI :
10.1109/MWSYM.1997.604519
