InP photonic integrated circuits for optical communciations

Author

Yoo, S.J.B. ; Lourdudoss, S.

Author_Institution

Dept of Electr. & Comput. Eng., Univ. of California, Davis, CA

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

6

Abstract

This paper describes photonic integration circuits (PICs) realized on the InP platform including high-speed mode locked lasers, arrayed waveguide gratings (AWGs), differential Mach-Zehnder optical switches (MZI), and high-speed amplitude and phase modulators. Selected area hydride vapor phase epitaxy (HVPE) and organometallic chemical vapor deposition (OMCVD) were used to realized planarized and passivated integration including active and passive elements. The integrated chips of various configurations were investigated for dasiaoptical code division multiple access (O-CDMA)psila, in local area networks, and for dasiaoptical arbitrary waveform generation (OAWG),psila in high-speed optical communications.

Keywords

III-V semiconductors; MOCVD; arrayed waveguide gratings; code division multiplexing; function generators; indium compounds; integrated optics; local area networks; modulators; optical communication equipment; optical switches; semiconductor lasers; vapour phase epitaxial growth; InP; amplitude modulator; arrayed waveguide gratings; differential Mach-Zehnder optical switches; high-speed mode locked lasers; high-speed optical communciation; local area networks; optical arbitrary waveform generation; optical code division multiple access; organometallic chemical vapor deposition; phase modulator; photonic integrated circuits; selected area hydride vapor phase epitaxy; Arrayed waveguide gratings; High speed optical techniques; Indium phosphide; Integrated optics; Laser mode locking; Optical arrays; Optical modulation; Optical waveguides; Phased arrays; Photonic integrated circuits; AWGs; HVPE; InP; Mach-Zehnder; OMCVD; lasers; planarization;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4703055

Filename

4703055