InP on BiCMOS technology platform for millimeter-wave and THz MMIC

Author

Krozer, V. ; Jensen, T. ; Kramer, T. ; Ostermay, Ina ; Weimann, Nils ; Schmuckle, F.J. ; Kruger, Olaf ; Heinrich, Wolfgang ; Lisker, M. ; Elkhouly, Mohamed ; Glisic, Savo ; Tillack, Bernd ; Meliani, Chafik

Author_Institution

Ferdinand-Braun-Inst., Leibniz-Inst. fuer Hoechstfrequenztechnik, Berlin, Germany

fYear

2013

fDate

9-11 Sept. 2013

Firstpage

1

Lastpage

2

Abstract

This work presents a novel InP DHBT-SiGe BiCMOS technology platform by wafer-scale heterogeneous integration. The technology provides vertical stacking of processed InP DHBT wafers directly on top of processed BiCMOS wafer with low-loss ultrabroadband interconnects up to 200 GHz. We demonstrate first MMIC operating up to 300 GHz.

Keywords

BiCMOS integrated circuits; MMIC; BiCMOS technology platform; BiCMOS wafer; DHBT wafers; THz MMIC; millimeter wave; ultrabroadband interconnects; wafer scale heterogeneous integration; BiCMOS integrated circuits; DH-HEMTs; Heterojunction bipolar transistors; Indium phosphide; Integrated circuit interconnections; MMICs; Voltage-controlled oscillators; Heterojunction bipolar transistors; heterogeneous integration; integrated circuit interconnections; millimeter wave integrated circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Millimeter Waves and THz Technology Workshop (UCMMT), 2013 6th UK, Europe, China

Conference_Location

Rome, Italy

Type

conf

DOI

10.1109/UCMMT.2013.6641505

Filename

6641505