Comparison of bulk and epitaxial 4H-SiC detectors for radiation hard particle tracking

Author

Quinn, T. ; Bates, R. ; Bruzzi, M. ; Cunningham, W. ; Mathieson, K. ; Moll, M. ; Nelson, T. ; Nilsson, H.E. ; Pintillie, I. ; Reynolds, L. ; Sciortino, S. ; Sellin, P. ; Strachan, H. ; Svensson, B.G. ; Vaitkus, J. ; Rahman, M.

Author_Institution

Dept. of Phys. & Astron., Glasgow Univ., UK

Volume

2

fYear

2003

fDate

19-25 Oct. 2003

Firstpage

1028

Abstract

Measurements and simulations have been carried out using bulk and epitaxial SiC detectors. Samples were irradiated to fluences of around 10¹⁴ hardrons/cm². Material of thickness 40μm gave a charge collection efficiency of 100% dropping to around 60% at 100 μm thickness. Detailed MEDICI simulations incorporated the main defect levels in SiC, the vanadium center, Z-center and a mid-gap level as measured by deep level transient spectroscopy and other techniques. Calculated recombination currents and charge collection efficiencies at varying fluences were comparable to experimental data. The study suggests that SiC detectors will operate up to fluences around 10¹⁶/cm² as required by future particle physics experiments.

Keywords

deep level transient spectroscopy; defect states; radiation hardening (electronics); semiconductor counters; semiconductor epitaxial layers; silicon compounds; wide band gap semiconductors; 100 mm; 40 mm; 4H-SiC detectors; MEDICI simulations; SiC; charge collection efficiencies; charge collection efficiency; deep level transient spectroscopy; main defect levels; mid-gap level; radiation hard particle tracking; recombination currents; Conducting materials; Crystalline materials; Medical simulation; Particle tracking; Photonic band gap; Physics; Radiation detectors; Semiconductor materials; Silicon carbide; Spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium Conference Record, 2003 IEEE

ISSN

1082-3654

Print_ISBN

0-7803-8257-9

Type

conf

DOI

10.1109/NSSMIC.2003.1351868

Filename

1351868