Title :
Advanced InP DHBT process for high speed LSI circuits
Author :
Urteaga, M. ; Pierson, R. ; Rowell, P. ; Choe, M. ; Mensa, D. ; Brar, B.
Author_Institution :
Teledyne Sci. & Imaging Co., Thousand Oaks, CA
Abstract :
We report on the development of an advanced InP double heterojunction bipolar transistor (DHBT) technology that utilizes electroplated device contacts and dielectric sidewall spacers to form a self-aligned base-emitter junction. These processes permit aggressive scaling of the transistor, while achieving high levels of yield and manufacturability. HBTs with 0.5 mum emitter junction widths have been demonstrated with an ft/fmax of 405/390 GHz and a common-emitter breakdown voltage BVCEO >4 V. Large-scale direct digital synthesizer (DDS) circuits have been fabricated operating at clock rates up to 24 GHz.
Keywords :
III-V semiconductors; bipolar digital integrated circuits; heterojunction bipolar transistors; high-speed integrated circuits; indium compounds; large scale integration; HBTs; InP; clock rates; common-emitter breakdown voltage; dielectric sidewall spacers; double heterojunction bipolar transistor; electroplated device contacts; high speed LSI circuits; large-scale direct digital synthesizer circuit; self-aligned base-emitter junction; Circuits; DH-HEMTs; Dielectric devices; Double heterojunction bipolar transistors; Indium phosphide; Large scale integration; Large-scale systems; Manufacturing processes; Space technology; Synthesizers; InP heterojunction bipolar transistor; dielectric sidewall spacer; direct digital synthesizer; electroplated contacts; self-aligned contacts;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4703058
