Title :
Scalable, monolythically-integrated detectors for THz imaging
Author :
Boppel, S. ; Lisauskas, Alvydas ; Bauer, Matthias ; Mundt, M. ; Krozer, V. ; Roskos, Hartmut G. ; Venckevicius, R. ; Minkevicius, L. ; Kasalynas, I. ; Seliuta, Dalius ; Valusis, G. ; Shevchenko, S. ; Wurfl, Joachim ; Heinrich, Wolfgang ; Trankle, Gunther
Author_Institution :
Phys. Inst., Johann Wolfgang Goethe-Univ. Frankfurt, Frankfurt am Main, Germany
Abstract :
We discuss two different implementations of field-effect-transistor based detectors (TeraFETs) optimised for imaging above 1 terahertz (THz). (i) Resonant-antenna-coupled MOSFET rectifiers have been fabricated using CMOS technology and (ii) broad-band devices by exploting GaN/AlGaN high-electron-mobilitiy transistors. Both technologies are scalable to large detector arrays and allow realisation of sensitive detectors deep in the THz frequency range.
Keywords :
CMOS integrated circuits; MOSFET; aluminium compounds; gallium compounds; high electron mobility transistors; rectifiers; submillimetre wave detectors; submillimetre wave imaging; wide band gap semiconductors; CMOS technology; GaN-AlGaN; THz frequency range; THz imaging; TeraFET; broad-band devices; detector arrays; field-effect-transistor based detectors; high-electron-mobilitiy transistors; monolythically-integrated detectors; resonant-antenna-coupled MOSFET rectifiers; Current measurement; Detectors; Gallium nitride; HEMTs; Laser beams; MODFETs; Terahertz detectors; field-effect transistors; plasma-wave-assisted mixing;
Conference_Titel :
Millimeter Waves and THz Technology Workshop (UCMMT), 2013 6th UK, Europe, China
Conference_Location :
Rome, Italy
DOI :
10.1109/UCMMT.2013.6641509
