Title :
Memristor crossbar arrays with junction areas towards sub-10 × 10 nm2
Author :
Pi, Shuang ; Lin, Peng ; Xia, Qiangfei
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Massachusetts, Amherst, MA, USA
Abstract :
We used diluted hydrofluoric acid to shrink the feature size of a silicon dioxide nanoimprint mold to sub-10 nm regime. Using this mold, we have fabricated memristor crossbar arrays using nanoimprint lithography. We demonstrated that memristor devices with small junction areas exhibited bipolar non-volatile switching behavior with high ON/OFF ratio and low operational current.
Keywords :
memristors; nanolithography; soft lithography; diluted hydrofluoric acid; junction areas; memristor crossbar arrays; nanoimprint lithography; silicon dioxide nanoimprint mold; Electrodes; Etching; Junctions; Memristors; Nanolithography; Nonvolatile memory; Switches; crossbar arrays; memristor; nanoimprint lithography; sub-10 nm;
Conference_Titel :
Cellular Nanoscale Networks and Their Applications (CNNA), 2012 13th International Workshop on
Conference_Location :
Turin
Print_ISBN :
978-1-4673-0287-6
DOI :
10.1109/CNNA.2012.6331452
