• DocumentCode
    1815976
  • Title

    Memristor crossbar arrays with junction areas towards sub-10 × 10 nm2

  • Author

    Pi, Shuang ; Lin, Peng ; Xia, Qiangfei

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Massachusetts, Amherst, MA, USA
  • fYear
    2012
  • fDate
    29-31 Aug. 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We used diluted hydrofluoric acid to shrink the feature size of a silicon dioxide nanoimprint mold to sub-10 nm regime. Using this mold, we have fabricated memristor crossbar arrays using nanoimprint lithography. We demonstrated that memristor devices with small junction areas exhibited bipolar non-volatile switching behavior with high ON/OFF ratio and low operational current.
  • Keywords
    memristors; nanolithography; soft lithography; diluted hydrofluoric acid; junction areas; memristor crossbar arrays; nanoimprint lithography; silicon dioxide nanoimprint mold; Electrodes; Etching; Junctions; Memristors; Nanolithography; Nonvolatile memory; Switches; crossbar arrays; memristor; nanoimprint lithography; sub-10 nm;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Cellular Nanoscale Networks and Their Applications (CNNA), 2012 13th International Workshop on
  • Conference_Location
    Turin
  • ISSN
    2165-0160
  • Print_ISBN
    978-1-4673-0287-6
  • Type

    conf

  • DOI
    10.1109/CNNA.2012.6331452
  • Filename
    6331452
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1815976