InP-HEMT MMICs for passive millimeter-wave imaging sensors

Author

Sato, M. ; Hirose, T. ; Ohki, T. ; Takahashi, T. ; Makiyama, K. ; Hara, N. ; Sato, H. ; Sawaya, K. ; Mizuno, K.

Author_Institution

Fujitsu Ltd., Atsugi

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

4

Abstract

This paper describes InP-HEMT MMICs for 94 GHz band passive millimeter-wave (PMMW) imaging sensors. In order to obtain high sensitivity with a single MMIC, we developed a new structure in MMIC to suppress unwanted feedback power that causes amplifier instability. The structure is also suited for flip chip bonding (FCB). The measured sensitivity of the MMIC was over 500,000 V/W at the frequency of 94 GHz. We also developed the RF front-end of the PMMW imager by mounting the MMIC on an antenna substrate by FCB assembly. In addition, we demonstrated examples of a millimeter-wave image acquired by the PMMW imager.

Keywords

III-V semiconductors; MMIC; field effect MIMIC; flip-chip devices; high electron mobility transistors; image sensors; indium compounds; integrated optoelectronics; low noise amplifiers; millimetre wave detectors; millimetre wave receivers; optical receivers; HEMT; InP; LNA; amplifier instability; antenna substrate; feedback power; flip chip bonding; frequency 94 GHz; passive millimeter-wave imaging sensors; receiver MMIC; Antenna measurements; Bonding; Feedback; Flip chip; High power amplifiers; Image sensors; MMICs; Millimeter wave measurements; Radiofrequency amplifiers; Sensor phenomena and characterization; HEMT; LNA; PMMW; flip chip bonding; inverted microstrip line; linearly tapered slot antenna;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4703060

Filename

4703060