Title :
Silicon carbide MESFETs for high-power S-band applications
Author :
Allen, S.T. ; Sadler, R.A. ; Alcom, T.S. ; Palmour, J.W. ; Carter, C.H., Jr.
Author_Institution :
Cree Research Inc., Durham, NC, USA
Abstract :
Silicon carbide MESFETs with 0.7 /spl mu/m gates and 18 mm of total periphery had a P/sub 1db/ of 15 watts CW at 2.1 GHz with a power-added efficiency of 54%. These FETs were optimized for S-band power and had an f/sub T/ of 8.5 GHz and an f/sub max/ of 25 GHz. Similar devices with 0.45 /spl mu/m gate lengths had an f/sub T/ of 22 GHz and an f/sub max/ as high as 50 GHz, demonstrating the potential of this technology to extend to much higher frequencies.
Keywords :
UHF field effect transistors; microwave field effect transistors; microwave power transistors; power MESFET; power field effect transistors; silicon compounds; wide band gap semiconductors; 0.45 micron; 0.7 micron; 2.1 to 50 GHz; 54 percent; MESFETs; SiC; high-power S-band applications; Breakdown voltage; Electric breakdown; Electrons; Gallium arsenide; MESFETs; Microwave devices; Photonic band gap; Silicon carbide; Thermal conductivity; Voltage measurement;
Conference_Titel :
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-3814-6
DOI :
10.1109/MWSYM.1997.604520
