Schottky diode mixers for MetOp SG satellites

Author

Hui Wang ; Rea, S. ; Alderman, B. ; Moyna, Brian ; Brewster, Nick

Author_Institution

Sci. & Technol. Facilities Council, Rutherford Appleton Lab., Didcot, UK

fYear

2013

fDate

9-11 Sept. 2013

Firstpage

1

Lastpage

1

Abstract

Summary form only given. This paper summaries the RAL Schottky diode mixer performance from 166 to 664 GHz. These mixers employ either discrete GaAs Schottky diodes soldered on quartz substrates or integrated GaAs membrane Schottky diodes. Schottky diode-based submillimeter wave receivers are a key enabling technology for remote sensing of the Earth´s Atmosphere. Six mixers have been developed to cover six different frequency bands from 166 to 664 GHz, and are dedicated to various on-going projects. For example, mixers at 166, 183 and 325 GHz are under-going preliminary reliability assessment for the European MetOp Second Generation satellites.

Keywords

III-V semiconductors; Schottky diode mixers; artificial satellites; gallium arsenide; millimetre wave diodes; quartz; remote sensing; submillimetre wave receivers; substrates; terrestrial atmosphere; Earth atmosphere; European MetOp Second Generation satellites; MetOp SG satellites; RAL Schottky diode mixer; Schottky diode mixers; Schottky diode-based submillimeter wave receivers; discrete GaAs Schottky diodes; frequency 166 GHz to 664 GHz; integrated GaAs membrane Schottky diodes; quartz substrates; remote sensing; Abstracts; Electronic mail; Gallium arsenide; Laboratories; Mixers; Satellites; Schottky diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Millimeter Waves and THz Technology Workshop (UCMMT), 2013 6th UK, Europe, China

Conference_Location

Rome, Italy

Type

conf

DOI

10.1109/UCMMT.2013.6641515

Filename

6641515