Low temperature semiconductor electronics

Author

Jaeger, Richard C. ; Gaensslen, Fritz H.

Author_Institution

Dept. of Electr. Eng., Auburn Univ., AL, USA

fYear

1988

fDate

11-13 May 1988

Firstpage

106

Lastpage

114

Abstract

The authors consider that, at any technology level, operation at liquid nitrogen temperature (LNT: 77.3 K) can directly yield a performance improvement exceeding that provided through down-scaling by a factor of two. Thus, MOS technology limits are extended by one generation through LNT operation. Because of its attractive speed, density, and power attributes, liquid-nitrogen-cooled CMOS represents a strategic technology alternative for mainframe computers, an area which has traditionally been the exclusive domain of bipolar technology. A summary of the advantages for MOS microelectronics operated at LNT is presented in a table and discussed

Keywords

cooling; cryogenics; field effect integrated circuits; integrated circuit technology; reviews; 77.3 K; MOS microelectronics; liquid N₂; liquid-nitrogen-cooled CMOS; low temperature operation; review; semiconductor electronics; Books; CMOS technology; Geometry; Integrated circuit technology; MOS devices; Nitrogen; Power dissipation; Superconducting materials; Temperature; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermal Phenomena in the Fabrication and Operation of Electronic Components: I-THERM '88, InterSociety Conference on

Conference_Location

Los Angeles, CA

Type

conf

DOI

10.1109/ITHERM.1988.28689

Filename

28689