• DocumentCode
    1816210
  • Title

    MOSFET modeling for analog circuit CAD: Problems and prospects

  • Author

    Tsividis, Y. ; Suyama, K.

  • Author_Institution
    Div. of Comput. Sci., Nat. Tech. Univ. of Athens, Greece
  • fYear
    1993
  • fDate
    9-12 May 1993
  • Abstract
    The requirements for good MOSFET modeling as they apply to usage in analog and mixed analog-digital design are discussed. A set of benchmark tests that can be easily performed is given, and it is argued that most CAD (computer-aided design) models today fail such tests even for simple, long-channel devices at room temperature. A number of other problems are discussed, and in certain cases specific cures are suggested. The issue of parameter extraction is addressed. Finally, the context of model development and usage is considered, and it is argued that some of the factors responsible for the problems encountered in the modeling effort are of a nontechnical nature
  • Keywords
    semiconductor device models; ASIC; CAD models; MOSFET modeling; analog circuit CAD; benchmark tests; mixed analog-digital design; model development; model usage; parameter extraction; Analog circuits; Analog-digital conversion; Benchmark testing; Circuit testing; Context modeling; Design automation; MOSFET circuits; Parameter extraction; Performance evaluation; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Custom Integrated Circuits Conference, 1993., Proceedings of the IEEE 1993
  • Conference_Location
    San Diego, CA
  • Print_ISBN
    0-7803-0826-3
  • Type

    conf

  • DOI
    10.1109/CICC.1993.590710
  • Filename
    590710