DocumentCode
1816210
Title
MOSFET modeling for analog circuit CAD: Problems and prospects
Author
Tsividis, Y. ; Suyama, K.
Author_Institution
Div. of Comput. Sci., Nat. Tech. Univ. of Athens, Greece
fYear
1993
fDate
9-12 May 1993
Abstract
The requirements for good MOSFET modeling as they apply to usage in analog and mixed analog-digital design are discussed. A set of benchmark tests that can be easily performed is given, and it is argued that most CAD (computer-aided design) models today fail such tests even for simple, long-channel devices at room temperature. A number of other problems are discussed, and in certain cases specific cures are suggested. The issue of parameter extraction is addressed. Finally, the context of model development and usage is considered, and it is argued that some of the factors responsible for the problems encountered in the modeling effort are of a nontechnical nature
Keywords
semiconductor device models; ASIC; CAD models; MOSFET modeling; analog circuit CAD; benchmark tests; mixed analog-digital design; model development; model usage; parameter extraction; Analog circuits; Analog-digital conversion; Benchmark testing; Circuit testing; Context modeling; Design automation; MOSFET circuits; Parameter extraction; Performance evaluation; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Custom Integrated Circuits Conference, 1993., Proceedings of the IEEE 1993
Conference_Location
San Diego, CA
Print_ISBN
0-7803-0826-3
Type
conf
DOI
10.1109/CICC.1993.590710
Filename
590710
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