DocumentCode :
1816238
Title :
Modeling and implementation of oxide memristors for neuromorphic applications
Author :
Chang, Ting ; Sheridan, Patrick ; Lu, Wei
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
fYear :
2012
fDate :
29-31 Aug. 2012
Firstpage :
1
Lastpage :
3
Abstract :
We report the fabrication, modeling and implementation of nanoscale tungsten-oxide (WOx) memristive (memristor) devices for neuromorphic applications. The device behaviors can be predicted accurately by considering both ion drift and diffusion. Short-term memory and memory enhancement phenomena, and the effects of spike rate, timing and associativity have been demonstrated. SPICE modeling has been achieved that allows circuit-level implementations.
Keywords :
biomedical electronics; memristors; nanoelectronics; neural chips; tungsten compounds; SPICE modeling; WOx; ion diffusion; ion drift; memory enhancement phenomena; nanoscale tungsten-oxide memristive devices; neuromorphic applications; oxide memristors; short-term memory; Fabrication; Mathematical model; Memristors; Neuromorphics; Neurons; Timing; Tungsten;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Cellular Nanoscale Networks and Their Applications (CNNA), 2012 13th International Workshop on
Conference_Location :
Turin
ISSN :
2165-0160
Print_ISBN :
978-1-4673-0287-6
Type :
conf
DOI :
10.1109/CNNA.2012.6331462
Filename :
6331462
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1816238
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