DocumentCode :
1816293
Title :
Selector devices for cross-point ReRAM
Author :
Kim, Seonghyun ; Lee, Wootae ; Hwang, Hyunsang
Author_Institution :
Dept. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol. (GIST), Gwangju, South Korea
fYear :
2012
fDate :
29-31 Aug. 2012
Firstpage :
1
Lastpage :
2
Abstract :
Both varistor-type bidirectional selector (VBS) and ultrathin NbO2 device with threshold switching (TS) characteristics were investigated. A highly non-linear VBS showed superior performances including high current density (>;3×107A/cm2) and high selectivity (~104). Ultrathin NbO2 exhibits excellent TS characteristics such as high temperature stability (~160oC), good switching uniformity, and extreme scalability.
Keywords :
current density; electronic switching systems; memory architecture; niobium compounds; random-access storage; thermal stability; varistors; NbO2; TS characteristics; cross-point ReRAM; current density; nonlinear VBS; recently-resistive switching memory; scalability; selectivity; switching uniformity; temperature stability; threshold switching characteristics; ultrathin NbO2 device; varistor-type bidirectional selector device; Current density; Films; Scalability; Switches; Temperature; Temperature measurement; Thermal stability; cross-point memroy; selectivity; selector; threshold switching; varistor;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Cellular Nanoscale Networks and Their Applications (CNNA), 2012 13th International Workshop on
Conference_Location :
Turin
ISSN :
2165-0160
Print_ISBN :
978-1-4673-0287-6
Type :
conf
DOI :
10.1109/CNNA.2012.6331466
Filename :
6331466
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1816293
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