Title :
Noise analysis of NPN SOI bipolar transistors for the design of charge measuring systems
Author :
Ratti, Lodovico ; Speziali, Valeria ; Traversi, Gianluca ; Manghisoni, Massimo ; Re, Valerio ; Fallica, Giorgio ; Leonardi, Salvatore
Abstract :
This paper is concerned with the analysis of the noise properties of NPN junction bipolar transistors fabricated in a monolithic technology. Such devices are part of a BiCMOS silicon on insulator process, whose suitability for radiation hard applications is being evaluated. A thorough noise characterization, including series and parallel contribution measurements, was performed in view of the design of high speed analog frontend electronics for radiation detectors. For this purpose, a method for optimizing the noise performances of charge measuring systems has been applied to the experimental data from single device characterization.
Keywords :
BiCMOS integrated circuits; bipolar transistors; semiconductor counters; semiconductor device noise; silicon-on-insulator; BiCMOS; NPN SOI bipolar transistors; charge measuring systems; noise analysis; noise characterization; parallel contribution measurements; series contribution measurements; BiCMOS integrated circuits; Bipolar transistors; Charge measurement; Current measurement; Noise measurement; Optimization methods; Performance evaluation; Radiation detectors; Silicon on insulator technology; Velocity measurement;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2003 IEEE
Print_ISBN :
0-7803-8257-9
DOI :
10.1109/NSSMIC.2003.1351882
