DocumentCode :
1816375
Title :
Transport phenomena in crystal growth
Author :
Ostrach, Simon
Author_Institution :
Dept. of Mech. & Aerosp. Eng., Case Western Reserve Univ., Cleveland, OH, USA
fYear :
1988
fDate :
11-13 May 1988
Firstpage :
193
Abstract :
Summary form only given, as follows. Some representative vapor, melt, and solution growth techniques are described and the essential transport phenomena for each is identified. Recent research to gain further understanding and a better description of transport phenomena in crystal growth is discussed. The problems of this type include: natural convection in shallow enclosures; mixed force and free convection; convection with heat flux in more than one direction; thermosolutal convection; and thermocapillary flows. The implications of this work to improved crystal quality is indicated.<>
Keywords :
capillarity; convection; crystal growth; convection; crystal growth; crystal quality; heat flux; melt growth; natural convection; shallow enclosures; solution growth; thermocapillary flows; thermosolutal convection; transport phenomena; vapour growth; Aerospace engineering; Crystals;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Thermal Phenomena in the Fabrication and Operation of Electronic Components: I-THERM '88, InterSociety Conference on
Conference_Location :
Los Angeles, CA, USA
Type :
conf
DOI :
10.1109/ITHERM.1988.28702
Filename :
28702
Link To Document :
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