A hybrid photonic-integrated electroabsorption modulator device for 50-Gb/s DQPSK generation

Author

Kazmierski, C. ; Dupuis, N. ; Decobert, J. ; Alexandre, F. ; Jany, C. ; Garreau, A. ; Landreau, J. ; Kang, I. ; Chandrasekhar, S. ; Buhl, L. ; Bernasconi, P.G. ; Liu, X. ; Raybon, G. ; Giles, C.R. ; Rasras, M. ; Cappuzzo, M. ; Gomez, L.T. ; Chen, Y.F. ; E

Author_Institution

III-V Lab., Alcatel-Thales, Marcoussis

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

2

Abstract

We report a compact hybrid photonic-integrated optical device consisting of AlGaInAs/InP electroabsorption modulators and a four-arm silica-on-silicon planar lightwave circuit optical interferometer. We use the device to generate 50-Gb/s NRZ-DQPSK signal with excellent performances comparable to those of the commercial lithium niobate DQPSK modulators, while requiring only 2.5V_pp drive signals.

Keywords

III-V semiconductors; aluminium compounds; differential phase shift keying; electroabsorption; gallium arsenide; indium compounds; integrated optics; integrated optoelectronics; modulators; quadrature phase shift keying; silicon-on-insulator; AlGaInAs-InP; DQPSK generation; bit rate 50 Gbit/s; electroabsorption modulators; four-arm silica-on-silicon planar lightwave circuit optical interferometer; hybrid photonic-integrated electroabsorption modulator device for; integrated optical device; Hybrid power systems; Indium phosphide; Optical filters; Optical interferometry; Optical modulation; Optical transmitters; Optical waveguides; Programmable control; Quadrature phase shift keying; Silicon compounds; QPSK modulation; electroabsroption modulator; photonic integrated device;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4703073

Filename

4703073