DocumentCode :
1816469
Title :
Origin of magnetic field enhancement in the generation of THz radiation from semiconductor surfaces
Author :
Shan, J. ; Heinz, T.F. ; Weiss, C. ; Wallenstein, R. ; Beigang, R.
Author_Institution :
Dept. of Phys., Columbia Univ., New York, NY, USA
fYear :
2001
fDate :
11-11 May 2001
Firstpage :
46
Lastpage :
47
Abstract :
Summary form only given. A common method for the generation of THz radiation utilizes the transient currents produced in the depletion layer of a semiconductor surface by irradiation with an ultrafast laser pulse. Recently there have been several experimental demonstrations of the possibility of strongly increasing the efficiency of this emission process by the application of a static magnetic field. Since the first report of this effect, the Lorentz force has been evoked to explain the phenomenon. Still, to date, no simple model has been developed capable of predicting the large enhancements seen experimentally. We present a theoretical model of this phenomena.
Keywords :
carrier mobility; high-speed optical techniques; laser beam effects; magneto-optical effects; microwave photonics; semiconductor device models; submillimetre wave generation; surface phenomena; THz radiation generation; carrier dynamics; depletion layer; emission process; magnetic field enhancement; semiclassical model; semiconductor surfaces; static magnetic field; transient currents; ultrafast laser pulse; Dielectrics; Electronic mail; Lorentz covariance; Magnetic field measurement; Magnetic fields; Optical materials; Optical pulse generation; Optical surface waves; Predictive models; Surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2001. QELS '01. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-663-X
Type :
conf
DOI :
10.1109/QELS.2001.961830
Filename :
961830
Link To Document :
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