III–V metal-oxide-semiconductor technology

This short course on emerging III-V metal-oxide-semiconductor technology covers the following subjects. 1) Application spaces: RF power and CMOS. 2) The silicon CMOS perspective: performance gap beyond the 45 nm node, heterogeneous integration and III-V MOSFET challenges, III-V FET appeal. 3) Oxide/III-V semiconductor interface and surface chemistry. 4) Device concepts for high mobility channels: flatband-mode vs. inversion mode. 5) Electron mobilities in III-V MOSFET channels. 6) GaAs MOSFETs for RF power applications. 7) Proof of concept: InGaAs channel MOSFETs for CMOS applications. 8) Development strategy for non-silicon CMOS: materials proof of concept and volume manufacturing, devices proof of concept. 9) Alternative approaches: graphene channels, impact ionization MOS (i-MOS), interband tunneling MOSFET etc.