DocumentCode :
1816481
Title :
CDF Run IIb silicon: the new innermost layer
Author :
Merkel, Petra
Author_Institution :
Fermi Nat. Accel. Lab., Batavia, IL, USA
Volume :
2
fYear :
2003
fDate :
19-25 Oct. 2003
Firstpage :
1128
Abstract :
The innermost layer (L00) of the Run Ila silicon detector of CDF was planned to be replaced for the high luminosity Tevatron upgrade of Run IIb. This new silicon layer (L0) is designed to be a radiation tolerant replacement for the otherwise very similar L00 from Run Ila. The data are read out via long, fine-pitch, low-mass cables allowing the hybrids with the chips to sit at higher z (∼ 70 cm), outside of the tracking volume. The design and first results from the prototyping phase are presented. Special focus is placed on the amount and the structure of induced noise as well as signal to noise values.
Keywords :
position sensitive particle detectors; radiation hardening (electronics); silicon radiation detectors; CDF Run IIb; innermost layer; radiation tolerant replacement; signal to noise values; Cables; Collaboration; Detectors; Electronics cooling; Light scattering; Prototypes; Silicon; Strips; Structural beams; Temperature sensors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium Conference Record, 2003 IEEE
ISSN :
1082-3654
Print_ISBN :
0-7803-8257-9
Type :
conf
DOI :
10.1109/NSSMIC.2003.1351890
Filename :
1351890
Link To Document :
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