DocumentCode
1816838
Title
Semiconductor-based THz plasmonic metamaterials
Author
Letizia, Rosa
Author_Institution
Dept. of Eng., Lancaster Univ. Lancaster, Lancaster, UK
fYear
2013
fDate
9-11 Sept. 2013
Firstpage
1
Lastpage
2
Abstract
A new metamaterial (MTM) for THz range applications is proposed. The unit cell consists of indium antimonide (InSb) and silicon (Si) single-layered fishnet MTM. The InSb-based MTM shows enhanced resonance in the THz band and can be efficiently tuned by changing doping level of the semiconductor.
Keywords
elemental semiconductors; indium compounds; metamaterials; plasmonics; semiconductor doping; silicon; InSb; Si; THz range application; doping level; indium antimonide; semiconductor-based THz plasmonic metamaterial; silicon single-layered fishnet MTM; Dielectric constant; Metamaterials; Plasmons; Resonant frequency; Silicon; InSb; Metamaterials; Plasmonics; Semiconductors; THz;
fLanguage
English
Publisher
ieee
Conference_Titel
Millimeter Waves and THz Technology Workshop (UCMMT), 2013 6th UK, Europe, China
Conference_Location
Rome, Italy
Type
conf
DOI
10.1109/UCMMT.2013.6641545
Filename
6641545
Link To Document