Fine frequency tuning in resonant sensors

Author

Cabuz, C. ; Fukatsu, K. ; Hashimoto, H. ; Shoji, S. ; Kurabayashi, T. ; Minami, K. ; Esashi, M.

Author_Institution

Fac. of Eng., Tohoku Univ., Sendai, Japan

fYear

1994

fDate

1994

Firstpage

245

Lastpage

250

Abstract

To realize highly sensitive resonant IR sensors the control of mechanical properties of the p+ silicon film is essential. Microfocus Raman spectroscopy and secondary ion mass spectrometry were used to measure the stress and boron concentration profile in the p+ silicon film respectively. Measurements of bending in cantilevers, of transversal stress gradient and boron profile in the films were found as being consistent with each other. Prediction of mechanical properties of micromechanical structure can be realized by using these techniques. Fine tuning of the resonance frequency in the final, packaged device, was realized by using an electrostatically activated axial force

Keywords

electric sensing devices; B concentration profile; Si; Si:B; bending; cantilevers; electrostatically activated axial force; fine frequency tuning; mechanical properties; microfocus Raman spectroscopy; micromechanical structure; p+ Si film; resonant IR sensors; resonant sensors; stress; transversal stress gradient; Boron; Infrared sensors; Mechanical factors; Mechanical sensors; Resonance; Resonant frequency; Semiconductor films; Silicon; Stress measurement; Tuning;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems, 1994, MEMS '94, Proceedings, IEEE Workshop on

Conference_Location

Oiso

Print_ISBN

0-7803-1833-1

Type

conf

DOI

10.1109/MEMSYS.1994.555760

Filename

555760