A novel Kondo effect in single atom transistors

Author

Tettamanzi, G.C. ; Lansbergen, G.P. ; Verduijn, J. ; Collaert, N. ; Biesemans, S. ; Blaauboer, M. ; Rogge, S.

Author_Institution

Kavli Inst. of Nanosci., Delft Univ. of Technol., Delft, Netherlands

fYear

2010

fDate

22-26 Feb. 2010

Firstpage

319

Lastpage

321

Abstract

We report the first observation of the Kondo effect in a single gate-tunable atom transistor fabricated using a complementary-metal-oxide-semiconductor (CMOS) compatible architecture. In this new geometry the presence of both orbital and of spin degrees of freedom leads to a considerably higher Kondo temperature and allows for tunability of the effect. The described mechanisms of transport are of fundamental importance for silicon nano-electronics as they demonstrate once again the influence of the valleys in determining the electronic properties of Si nano-structures.

Keywords

CMOS integrated circuits; Kondo effect; MOSFET; elemental semiconductors; nanoelectronics; silicon; CMOS; Kondo effect; Kondo temperature; Si; complementary metal oxide semiconductor; electronic properties; nanoelectronics; orbital degree of freedom; single gate tunable atom transistor; spin degree of freedom; FinFETs; Logic gates; Magnetic fields; Quantum dots; Silicon; Temperature dependence; Fin Field Effect Transistor (FinFET); Kondo effect; Orbital Kondo effect;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoscience and Nanotechnology (ICONN), 2010 International Conference on

Conference_Location

Sydney, NSW

Print_ISBN

978-1-4244-5261-3

Electronic_ISBN

978-1-4244-5262-0

Type

conf

DOI

10.1109/ICONN.2010.6045240

Filename

6045240