Title :
A modular merged technology process including submicron CMOS logic, nonvolatile memories, linear functions, and power components
Author :
Smayling, Michael ; Reynolds, Jack ; Redwine, Donald ; Keller, Steve ; Falessi, Georges
Author_Institution :
Texas Instruments, Inc., Houston, TX, USA
Abstract :
A process technology which merges submicron 5-V CMOS logic with high-voltage CMOS for nonvolatile memory, analog functions, and power drivers is described. Memory functions utilize high-density X-cell EPROMs (electrically programmble read-only memories) and low-complexity EEPROMs (electrically erasable programmable read-only memories). Power components include 50-V drain-extended CMOS transistors, as well as isolated 60-V `HSD´ (high-side-drive) and 90 V `LSD´ (low-side-drive) power lateral DMOS transistors. These components are merged in a modular process which makes it possible to match process complexity to design needs. Specific results are discussed, including component parameters and the uniformity of parameters for different flow options. The process is being used for designs of automotive microcontrollers, PowerLogic chips, and similar products requiring integrated multiple functions
Keywords :
CMOS logic circuits; 5 V; 50 V; 60 V; 90 V; PowerLogic chips; automotive microcontrollers; design needs; drain-extended CMOS transistors; high-density X-cell EPROM; high-voltage CMOS; integrated multiple functions; linear functions; low-complexity EEPROM; modular merged technology process; nonvolatile memories; power components; power drivers; power lateral DMOS transistors; process complexity; submicron CMOS logic; uniformity of parameters; Automotive engineering; CMOS logic circuits; CMOS process; CMOS technology; Driver circuits; EPROM; Isolation technology; Nonvolatile memory; PROM; Process design;
Conference_Titel :
Custom Integrated Circuits Conference, 1993., Proceedings of the IEEE 1993
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-0826-3
DOI :
10.1109/CICC.1993.590765
