Title :
Integration of high voltage transistors into a 1.5 micron CMOS process for LCD driver applications
Author :
Myers, Frank ; Sutor, Judy ; Tam, Pak ; Tsoi, Hak-Yam ; Trahan, Robert
Author_Institution :
Motorola, Inc., Mesa, AZ, USA
Abstract :
High-voltage (HV) NMOS and PMOS devices have been integrated into a 1.5-μm CMOS process which is in volume production. The high-voltage devices add minimal masking steps and do not compromise the standard CMOS devices in the flow. The HV transistors have been optimized for either 25 V or 45 V operation. Optimized transistors can withstand 45 V on both the drain and gate electrodes. It is concluded that this marriage of standard 1.5-μm CMOS with HV CMOS is ideal for LCD (liquid crystal display) driver applications
Keywords :
power integrated circuits; 1.5 micron; 25 V; 45 V; CMOS process technology; LCD driver applications; NMOS devices; PMOS devices; device optimisation; high voltage transistors; volume production; CMOS integrated circuits; CMOS process; CMOS technology; Driver circuits; Implants; Liquid crystal displays; Low voltage; MOS devices; MOSFETs; Transistors;
Conference_Titel :
Custom Integrated Circuits Conference, 1993., Proceedings of the IEEE 1993
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-0826-3
DOI :
10.1109/CICC.1993.590767
