Physical simulation of complete millimeter-wave amplifiers using full-wave FDTD technique

Author

Imtiaz, S.M.S. ; El-Ghazaly, S.M.

Author_Institution

Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA

Volume

1

fYear

1997

fDate

8-13 June 1997

Firstpage

79

Abstract

In this paper, the characterization of high frequency microwave amplifiers using a full-wave analysis coupled with physical modeling of the semiconductor device is presented. The simulation includes the input and output matching networks and the transistor as well. The entire amplifier is simulated with FDTD algorithm which also solves for the electromagnetic fields inside the transistor. The frequency dependence of the scattering parameters for the amplifier is presented.

Keywords

S-parameters; finite difference time-domain analysis; impedance matching; millimetre wave amplifiers; network analysis; transfer functions; 20 to 60 GHz; EHF; electromagnetic fields; full-wave FDTD technique; full-wave analysis; input matching networks; millimeter-wave amplifiers; output matching network; physical modeling; physical simulation; scattering parameters; semiconductor device; Coupled mode analysis; Finite difference methods; Frequency; Impedance matching; Microwave amplifiers; Microwave devices; Microwave transistors; Millimeter wave transistors; Semiconductor devices; Semiconductor optical amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1997., IEEE MTT-S International

Conference_Location

Denver, CO, USA

ISSN

0149-645X

Print_ISBN

0-7803-3814-6

Type

conf

DOI

10.1109/MWSYM.1997.604525

Filename

604525