Fabrication of undoped AlGaAs/GaAs electron quantum dots

Author

See, Andrew M. ; Klochan, Oleh ; Micolich, Adam P. ; Hamilton, Alex R. ; Aagesen, Martin ; Lindelof, Poul Erik

Author_Institution

Sch. of Phys., Univ. of New South Wales, Sydney, NSW, Australia

fYear

2010

fDate

22-26 Feb. 2010

Firstpage

326

Lastpage

328

Abstract

We have fabricated a quantum dot single electron transistor based on an AlGaAs/GaAs heterostructure without any modulation doping. Our device is very stable from an electronic perspective, with clear Coulomb blockade oscillations, and minimal drift in conductance when the device is set to the midpoint of a Coulomb blockade peak and held at constant gate bias. Bias spectroscopy measurements show typical Coulomb `diamonds´ free of any significant charge fluctuation noise. We also observe excited state transport in our device.

Keywords

Coulomb blockade; III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor heterojunctions; semiconductor quantum dots; single electron transistors; AlGaAs-GaAs; Coulomb blockade oscillations; bias spectroscopy; charge fluctuation noise; conductance drift; constant gate bias; excited state transport; single electron transistor; undoped electron quantum dots; Diamond-like carbon; Epitaxial layers; Gallium arsenide; Logic gates; Noise; Performance evaluation; Quantum dots;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoscience and Nanotechnology (ICONN), 2010 International Conference on

Conference_Location

Sydney, NSW

Print_ISBN

978-1-4244-5261-3

Electronic_ISBN

978-1-4244-5262-0

Type

conf

DOI

10.1109/ICONN.2010.6045253

Filename

6045253