A new front-end electronics design for silicon drift detector

Author

Venanzi, C. ; Çonka-Nurdan, T. ; Nurdan, K. ; Walenta, A.H. ; Longo, R.

Author_Institution

Dipt. di Fisica, Trieste Univ., Italy

Volume

2

fYear

2003

fDate

19-25 Oct. 2003

Firstpage

1292

Abstract

Silicon drift detectors (SDD) are state of the art devices for spectroscopy applications. The utmost energy resolution can be obtained by means of low noise front-end electronics, having shaping time of the order of microseconds. We are proposing a new front-end electronics for applications that may benefit from higher rate capability while maintaining a reasonable spectroscopic resolution. The idea is to combine a high speed semi-Gaussian shaping amplifier (originally designed for gas detectors) with very compact high speed low noise input-output stages. The shaper amplifier is implemented in hybrid technology. The shaping time can be controlled from fins to ions.

Keywords

drift chambers; nuclear electronics; silicon radiation detectors; Si; Si drift detector; front-end electronics design; high speed semi-Gaussian shaping amplifier; higher rate capability; low noise front-end electronics; spectroscopy applications; Energy resolution; Filters; Gas detectors; Low-noise amplifiers; Noise shaping; Preamplifiers; Signal design; Signal processing; Silicon; Spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium Conference Record, 2003 IEEE

ISSN

1082-3654

Print_ISBN

0-7803-8257-9

Type

conf

DOI

10.1109/NSSMIC.2003.1351930

Filename

1351930