Ultraviolet MSM photodetector based on GaN micromachining

Author

Müller, A. ; Konstantinidis, G. ; Dragoman, M. ; Neculoiu, D. ; Dinescu, A. ; Androulidaki, M. ; Kayambaki, M. ; Stavrinidis, A. ; Vasilache, D. ; Buiculescu, C. ; Petrini, I. ; Anton, C. ; Dascalu, D. ; Kostopoulos, A.

Author_Institution

IMT-Bucharest, Bucharest

Volume

1

fYear

2008

fDate

13-15 Oct. 2008

Firstpage

91

Lastpage

94

Abstract

This paper presents the manufacturing and the characterization of GaN membrane supported MSM photodetector structures obtained by means of nanolithographic techniques. Two different runs of MSM photodetectors, with different dimensions of the MSM structures and different GaN membrane thickness, have been performed and the detectors performances are annalised. Very low dark currents and unexpected high values, in the range of 50-100 A/W for the UV detectors responsivity have been obtained.

Keywords

micromachining; nanolithography; photodetectors; GaN; micromachining; nanolithography; ultraviolet MSM photodetector; Biomembranes; Dark current; Detectors; Gallium nitride; Manufacturing; Micromachining; Photodetectors; Semiconductor materials; Silicon; Substrates; GaN membranes; UV photodetector; dark current; nanolithography; responsivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2008. CAS 2008. International

Conference_Location

Sinaia

ISSN

1545-827X

Print_ISBN

978-1-4244-2004-9

Type

conf

DOI

10.1109/SMICND.2008.4703336

Filename

4703336